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SiC and GaN vs. IGBTs: The Imminent Tug of War for …
One of the leaders in SiC and GaN device development and products is Wolfspeed, a Cree company. The firm’s WAS300M12BM2 1.2-kV, 300-A SiC module is driven using existing Wolfspeed gate drivers for 62-mm modules.
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Considering that SiC MOSFETs have relatively low gate threshold voltage, VTH, a small amount of ground bounce could cause a positive bias of VGS exceeding VTH, if the gate driver is not designed to generate negative gate voltage.
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