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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT) p.39 Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals p.43 Growth of SiC Boules with Low Resistivity Distribution in Undoped
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Greater than 40% of the highpurity silicon is wasted and is removed as part of the slurry in the process of saw-wire slicing from mono-crystalline or polycrystalline silicon ingots into wafers
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Silicon uses widely as a semiconductor material due to its high abundance, moderate band gap, easy fabriion, crystal structure and silicon dioxide. Quartz is made to react with coke to produce metallurgical silicon in an electric furnace. The metallurgical silicon is then converted to trichlorosilane (TCS) in fluidized bed reactors.
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Crucible A modern crucible used in the production of silicon ingots via the Czochralski process. A crucible is a ceramic or metal container in which metals or other substances may be melted or subjected to very high temperatures. These crucibles in some cases